PE4250_15 Datasheet, PDF (1/9 Pages) Lucky Light Electronic – RF Switch

Product Description
The PE4250 is a HaRP™-enhanced Reflective SPDT (single
pole double throw) RF Switch for use in general switching
applications and mobile infrastructure. This device offers a
flexible supply voltage of 3.3/5V, single-pin or complementary
pin control inputs, and 4000 V ESD tolerance. It presents a
simple alternative solution to pin diode and mechanical relay
switches.
Peregrine’s HaRP™ technology enhancements deliver high
linearity and exceptional performance. It is an innovative
feature of the UltraCMOS™ process, providing performance
superior to GaAs with the economy and integration of
conventional CMOS.
Figure 1. Functional Diagram
RFC
RF1
ESD
RF2
ESD
Product Specification
PE4250
SPDT UltraCMOS™ RF Switch
10 – 3000 MHz, Reflective
Features
• HaRP-Technology Enhanced
• Low Insertion Loss: 0.65 dB @ 1000 MHz
• High Isolation: 51 dB @ 1000 MHz
• P1dB typical: +30.5 dBm
• IIP3 typical: +59 dBm
• Fast switching time: 150 ns
• Flexible supply voltage: 3.3 V ±10% or 5.0
V ±10% supply (see table 3)
• Excellent ESD protection: 4000 V HBM
• No blocking capacitors required
• Single pin or complementary control inputs
Figure 2. Package Type
8-lead MSOP
CMOS
Control
Driver
V1 V2
Table 1. Target Electrical Specifications Temp = 25°C, V_DD = 3.3 or 5.0 V
Parameter
Conditions
Min
Operation Frequency¹
10
10 MHz
Insertion Loss (RF1/RF2)
1000 MHz
2000 MHz
3000 MHz
1000 MHz
50
Isolation (RFC to RF1/RF2)
2000 MHz
46
3000 MHz
35
1000 MHz
Return Loss
2000 MHz
3000 MHz
Input 1 dB Compression²
50 - 3000 MHz
Input IP3
50 - 3000 MHz, +18 dBm per tone, 5 MHz spacing
Switching Time
50% CTRL to 10/90% RF
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. Note Absolute Maximum rating of P_IN = 27 dBm.
Typical
0.6
0.65
0.75
0.75
51
48
40
25
23
20
30.5
59
150
Max
3000
0.65
0.70
0.80
0.90
300
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
Document No. 70-0254-02 │ www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
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