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VS-8EWFSPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Glass passivated pellet chip junction | |||
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VS-8EWF..SPbF Soft Recovery Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
8 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.3
25.6
0.93
0.1
4
UNITS
V
mï
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 8 Apkï
25 A/μsï
TJ = 25 °C
VALUES
270
4.2
1
0.6
UNITS
ns
A
μC
IFM
trr
ta tb
di
t
dt
Qrr
Irr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction andï
storage temperature range
Maximum thermal resistance,ï
junction to case
Typical thermal resistance,ï
junction to ambient (PCB mount)
TJ, TStg
RthJC
DC operation
RthJA (1)
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/Wï
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
-40 to +150
UNITS
°C
2.5
°C/W
50
1
g
0.03
oz.
8EWF12S
Revision: 16-Jan-17
2
Document Number: 94109
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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