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VS-20L15TS-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Optimized for OR-ing applications
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VS-20L15TS-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
TO-263AB (D2PAK)
1
3
N/C
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Diode variation
TO-263AB (D2PAK)
20 A
15 V
0.33 V
600 mA at 100 °C
125 °C
10 mJ
Single die
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF
19 Apk, TJ = 125 °C (typical)
TJ
Range
VALUES
20
15
700
0.25
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
TEST CONDITIONS
TJ = 100 °C
VS-20L15TS-M3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current 
See fig. 5
IF(AV)
50 % duty cycle at TC = 85 °C, rectangular waveform
Maximum peak one cycle non-repetitive 
surge current

IFSM
See fig. 7
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 2 A, L = 6 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES UNITS
20
700
A
330
10
mJ
2
A
Revision: 28-Jul-14
1
Document Number: 95734
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000