VS-1N5820 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High frequency operation

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VS-1N5820, VS-1N5820-M3
Vishay Semiconductors
Schottky Rectifier, 3.0 A
C-16
Cathode
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
DO-201AD (C-16)
3A
20 V
See Electrical table
20 mA at 100 °C
150 °C
Single die
See Electrical table
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-1N5820... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
3 Apk, T_J = 25 °C
Range
VALUES
3.0
20
450
0.475
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-1N5820
20
VS-1N5820-M3
20
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
I_F(AV)
50 % duty cycle at T_L = 114 °C, rectangular waveform
With cooling fins
3.0
Maximum peak one cycle
non-repetitive surge current at T_J = 25 °C
I_FSM
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
450
90
UNITS
A
Revision: 11-Oct-11
1
Document Number: 93257
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