LMBT2222ADW1T1G Datasheet, PDF (5/6 Pages) Leshan Radio Company – Dual General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G
10
10
R_S = OPTIMUM
f = 1.0 kHz
8.0
I_C = 1.0 mA, R_S = 150 Ω
500 µA, R_S = 200 Ω
R_S = SOURCE
R_S = RESISTANCE
8.0
I_C = 50 µA
100 µA, R_S = 2.0 kΩ
100 µA
6.0
50 µA, R_S = 4.0 kΩ
6.0
500 µA
1.0 mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 5. Frequency Effects
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 6. Source Resistance Effects
30
20
C_eb
10
7.0
5.0
C_cb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
20 30 50
1.0
T_J = 25°C
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE(on) @ V_CE = 10 V
0.4
1.0 V
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
I_C, COLLECTOR CURRENT (mA)
500 1.0 k
Figure 9. “On” Voltages
500
V_CE = 20 V
T_J = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I_C, COLLECTOR CURRENT (mA)
Figure 8. Current–Gain Bandwidth Product
+0.5
0
R_qVC for V_CE(sat)
-ā0.5
-ā1.0
-ā1.5
-ā2.0
R_qVB for V_BE
-ā2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
I_C, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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