LMBT4403LT1 Datasheet, PDF (4/5 Pages) Leshan Radio Company – General Purpose Transistors (PNP SILICON)

LESHAN RADIO COMPANY, LTD.
LMBT4403LT1
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V _CE = –10 Vdc, T _A = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1.0 kHz
8
8
6
I _C = 1.0 mA, R _S = 430Ω
I _C = 500 µA, R _S = 560Ω
I = 50
C
µA, R _S = 2.7kΩ
4
I _C = 100 µA, R _S = 1.6 kΩ
6
I _C = 50 µA
100 µA
500 µA
4
1.0 mA
2
R_S = OPTIMUM SOURCE RESISTANCE
2
0
0.010.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
f , FREQUENCY (kHz)
Figure 8. Frequency Effects
50 100
0
50 100 200
500 1k 2k
5k 10k 20k
50k
R _S, SOURCE RESISTANCE (Ω)
Figure 9. Source Resistance Effects
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
1000
700
500
300
200
100
70
50
100
50
20
10
5
2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
1
0.5
0.2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
30
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I _C , COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I _C , COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
20
500
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I _C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
100
50
20
10
5.0
2.0
1.0
0.1
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I _C , COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
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