LNTR4003NLT1G_15 Datasheet, PDF (3/5 Pages) Leshan Radio Company – Small Signal MOSFET

LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G , S-LNTR4003NLT1G
TYPICAL PERFORMANCE CURVES (T_J = 25°C unless otherwise noted)
1.6
V_GS = 10 V to 5 V
1.2
4.5 V
1.6
V_DS ≥ 10 V
1.2
T_J = −55°C
0.8
0.4
0
0
10
8
4V
3.5 V
2.5 V
1
2
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
I_D = 0.2 A
T_J = 25°C
0.8
T_J = 125°C
0.4
0
0
1
2
3
4
5
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
1
V_GS = 10 V
0.8
T_J = 125°C
6
0.6
4
0.4
T_J = 25°C
2
0.2
T_J = −55°C
0
2.4
2.8
3.2
3.6
4
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0
0
0.1
0.2
0.3
0.4
0.5
0.6
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.80
1.60
I_D = 0.3 A
V_GS = 4.5 V
1000
V_GS = 0 V
1.40
T_J = 150°C
1.20
100
1.00
0.80
T_J = 125°C
0.60
−25 −50
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0
5
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5