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LBC847AWT1G_15 Datasheet, PDF (3/9 Pages) Leshan Radio Company – General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G
LBC846A, LBC847A, LBC848A
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1
1.0
IB, BASE CURRENT (mA)
10 20
Figure 5. Collector Saturation Region
0.2
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
10
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0 2.0
4.0 6.0 8.0 10
20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 8. Current−Gain − Bandwidth Product
LBC846B
600
150°C
500
VCE = 1 V
0.30
0.25
IC/IB = 20
150°C
400 25°C
300
−55°C
200
100
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
Rev.O 3/9