L2SC2411KQLT1G Datasheet, PDF (3/4 Pages) Leshan Radio Company – Medium Power Transistor NPN silicon

LESHAN RADIO COMPANY, LTD.
L2SC2411KQLT1G Series
Electrical characteristic curves(T_A = 25°C)
1000
500
Ta ^{= 100O C}
200
75^{O C}
O
50
C
100
25^{O C}
O
0
C
50
25^{O C}
50^{O C}
VCE = 3V
20
10
0.1 0.2 0.5 1 2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : I_C(mA)
Fig.5 DC current gain vs. collector current
500
Ta = 25 ^OC
V CE = 5V
200
100
50
0.5
1
2
5
10
20
50
EMITTER CURRENT : I_E(mA)
Fig.6 Gain bandwidth product vs. emitter current
50
Cib
20
Ta = 25^OC
f= 1MHz
IE =0A
IC = 0A
10
Cob
5
2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V_CE(V)
EMITTER TO BASE VOLTAGE: V_EB(V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.O 3/4