MC74VHC1G01 Datasheet, PDF (2/4 Pages) ON Semiconductor – 2-Input NAND Gate with Open Drain Output

LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CC
V IN
V OUT
I IK
I OK
I OUT
I CC
PD
θ JA
TL
TJ
T _stg
V ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
V < GND; V > V
OUT
OUT
CC
DC Supply Current per Supply Pin
Power dissipation in still air
SC–88A, TSOP–5
Thermal resistance
SC–88A, TSOP–5
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Storage temperature
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
– 0.5 to + 7.0
– 0.5 to 7.0
– 0.5 to 7.0
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
>2000
> 200
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
t r ,t f
Input Rise and Fall Time
V _CC = 3.3 ± 0.3 V
V _CC = 5.0 ± 0.5 V
Min
Max
Unit
2.0
5.5
V
0.0
5.5
V
0.0
7.0
V
– 55
+ 125
°C
0
100
ns/V
0
20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH1–2/4