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LP3415ELT1G_15 Datasheet, PDF (2/3 Pages) Leshan Radio Company – 20V P-Channel Enhancement-Mode MOSFET
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LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Dynamic3)
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Rg
VGS = 0V, ID = -250uA
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -4A
VGS = -4.5V, ID = -4A
VDS =VGS, ID = -250uA
VDS = -16V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS = 0V, f = 1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS =-10V, ID = -4A
VGS = -4.5V
VDD = -10V, RL = 2.5Ω
ID = -1A, VGEN = -4.5V
RG = 3Ω
VDS = -10V, VGS = 0V
f = 1.0 MHz
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = -1A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
3. Guaranteed by design; not subject to production testing
Min Typ Max Unit
-20
V
85.0
75.0
mΩ
60.0
-0.3
-1
V
-1
uA
±10
uA
6.5
Ω
4.59
5.97
2.14
2.78
nC
2.51
3.26
965.2 1930.4
1604 3208
ns
7716 15432
3452 6904
36.45
128.57
pF
15.17
-2.2
A
-1
V
Rev .O 2/3
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