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LNTS4409NWT1G Datasheet, PDF (2/5 Pages) Leshan Radio Company – Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection | |||
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LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
DrainâtoâSource Breakdown Voltage
DrainâtoâSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GateâtoâSource Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 70°C
TJ = 125°C
VDS = 0 V, VGS = 8.0 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DrainâtoâSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES AND CAPACITANCES
VGS = 4.5 V, ID = 0.6 A
VGS = 2.7 V, ID = 0.2 A
VGS = 4.5 V, ID = 1.2 A
VDS = 5.0 V, ID = 0.5 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GateâtoâSource Charge
QGS
GateâtoâDrain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 15 V,
ID = 0.8 A
TurnâOn Delay Time
td(ON)
Rise Time
tr
TurnâOff Delay Time
td(OFF)
Fall Time
tf
DRAINâSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V,
ID = 0.7 A, RG = 51 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 0.6 A
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
25
0.65
Typ
30
â2.0
249
299
260
0.5
49
22.4
8.0
1.2
0.2
0.28
0.3
5.0
8.2
23
41
0.82
Max
Unit
V
mV/°C
0.5
mA
2.0
5.0
3
uA
1.5
V
mV/°C
350
mW
400
S
60
pF
30
12
1.5
nC
0.50
0.40
12
ns
8.0
35
60
1.20
V
Rev .O 2/5
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