LNTK4003M3T5G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – Small Signal MOSFET

LESHAN RADIO COMPANY, LTD.
LNTK4003M3T5G , S-LNTK4003M3T5G
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V_(BR)DSS
V_GS = 0 V, I_D = 100 mA
30
Drain−to−Source Breakdown Voltage
V_(BR)DSS/T_J
40
Temperature Coefficient
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
I_DSS
I_GSS
V_GS = 0 V,
V_DS = 30 V
T_J = 25°C
V_DS = 0 V, V_GS = ±10 V
1.0
mA
±1.0
mA
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
V_GS(TH)
V_GS = V_DS, I_D = 250 mA
0.8
1.6
V
V_GS(TH)/T_J
3.4
mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
R_DS(on)
g_FS
V_GS = 4.0 V, I_D = 10 mA
V_GS = 2.5 V, I_D = 10 mA
V_DS = 3.0 V, I_D = 10 mA
1.0
1.5
W
1.5
2.0
0.33
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
C_iss
C_oss
C_rss
Q_G(TOT)
Q_G(TH)
Q_GS
Q_GD
V_GS = 0 V, f = 1.0 MHz,
V_DS = 5.0 V
V_GS = 5.0 V, V_DS = 24 V,
I_D = 0.1 A
21
19.7
pF
8.1
1.15
0.15
nC
0.32
0.23
Turn−On Delay Time
t_d(on)
16.7
Rise Time
Turn−Off Delay Time
t_r
t_d(off)
V_GS = 4.5 V, V_DD = 5.0 V,
I_D = 0.1 A, R_G = 50 W
47.9
65.1
ns
Fall Time
t_f
64.2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V_SD
V_GS = 0 V,
T_J = 25°C
I_S = 10 mA
T_J = 125°C
Reverse Recovery Time
t_RR
V_GS = 0 V, dI_S/dt = 8A/ms,
I_S = 10 mA
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.65
0.7
V
0.45
14
ns
Rev .O 2/5