LNTA7002NT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – Small Signal MOSFET

LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V_(BR)DSS
V_GS = 0 V, I_D = 100 mA
30
I_DSS
V_GS = 0 V, V_DS = 30 V
I_DSS
V_GS = 0 V, V_DS = 20 V,
T = 85 °C
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
I_GSS
I_GSS
I_GSS
V_DS = 0 V, V_GS = ±10 V
V_DS = 0 V, V_GS = ±5 V
V_DS = 0 V, V_GS = ±5 V
T = 85 °C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CAPACITANCES
V_GS(TH)
V_DS = V_GS, I_D = 100 mA
0.5
R_DS(on)
V_GS = 4.5 V, I_D = 154 mA
V_GS = 2.5 V, I_D = 154 mA
g_FS
V_DS = 3 V, I_D = 154 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
C_ISS
C_OSS
C_RSS
V_DS = 5.0 V, f = 1 MHz,
V_GS = 0 V
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Drain−Source Diode Characteristics
t_d(ON)
t_r
t_d(OFF)
t_f
V_GS = 4.5 V, V_DS = 5.0 V,
I_D = 75 mA, R_G = 10 W
Forward Diode Voltage
V_SD
V_GS = 0 V, I_S = 0.154 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Typ Max Unit
V
1.0 mA
1.0 mA
±25 mA
±1.0 mA
±1.0 mA
1.0
1.5
V
1.4
7.0
W
2.3
7.5
80
mS
11.5
10
pF
3.5
13
ns
15
98
ns
60
0.77 0.9 V
Rev .O 2/5