LMBTA92LT1G_11 Datasheet, PDF (2/4 Pages) Leshan Radio Company – HighVoltageTransistor PNP Silicon High voltage.

LESHAN RADIO COMPANY, LTD.
LMBTA92LT1G LMBTA93LT1G
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current
( VCB = –200Vdc, IE = 0)
( VCB = –300Vdc, IE = 0)
Collector Cutoff Current
( VEB = –6.0Vdc, IC = 0)
( VEB = –5.0Vdc, IC = 0)
LMBTA92
LMBTA93
LMBTA92
LMBTA93
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS (3)
DC Current Gain
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –30mAdc, V CE =–10 Vdc)
Collector–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
Both Types
Both Types
LMBTA92
LMBTA93
LMBTA92
LMBTA93
hFE
VCE(sat)
V BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
fT
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance
C cb
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz)
LMBTA92
LMBTA93
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
–300
–200
–300
–200
–5.0
—
—
—
—
Min
25
40
25
25
––
––
—
50
––
––
Max
Unit
Vdc
—
—
Vdc
—
—
—
–0.1
–100
–0.05
–100
Vdc
µAdc
µAdc
µAdc
Max
Unit
—
––
––
––
––
Vdc
–0.5
–0.5
–0.9
Vdc
––
MHz
pF
6.0
8.0
Rev.O 2/4