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LMBTA55LT1G Datasheet, PDF (2/3 Pages) Leshan Radio Company – Driver Transistors PNP Silicon RoHS requirements. | |||
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LESHAN RADIO COMPANY, LTD.
LMBTA55LT1G LMBTA56LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = â10 mAdc, V CE = â1.0 Vdc)
(I C = â100mAdc, V CE = â1.0 Vdc)
CollectorâEmitter Saturation Voltage
(I C = â100mAdc, I B = â10mAdc)
BaseâEmitter On Voltage
(I C = â100mAdc, V CE = â1.0Vdc)
hFE
VCE(sat)
V BE(on)
100
100
â
â
Max
â
â
â0.25
â1.2
SMALLâSIGNAL CHARACTERISTICS
Current âGainâBandwidth Product(4)
(V CE = â1.0 Vdc, I C = â100mAdc, f = 100 MHz)
fT
50
â
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
LMBTA55LT1G
LMBTA56LT1G
LMBTA55LT3G
LMBTA56LT3G
2H
2GM
2H
2GM
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Unit
â
Vdc
Vdc
MHz
TURNâON TIME
â1.0 V
VCC
+40 V
TURNâOFF TIME +VBB
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
Rev.O 2/3
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