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LMBT6428LT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – Amplifier Transistors | |||
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LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
S-LMBT6428LT1G S-LMBT6429LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 0.01 mAdc, V CE = 5.0 Vdc)
hFE
LMBT6428LT1G
LMBT6429LT1G
(I C = 0.1 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
(I C = 10 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
CollectorâEmitter Saturation Voltage
(I C = 10 mAdc, I B = 0.5 mAdc)
(I C = 100 mAdc, I B = 5.0 mAdc)
BaseâEmitter On Voltage
(I C = 1.0 mAdc, V CE = 5.0mAdc)
VCE(sat)
V BE(on)
SMALLâSIGNAL CHARACTERISTICS
Current GainâBandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
fT
C obo
C ibo
Min
250
500
250
500
250
500
250
500
ââ
ââ
0.56
100
ââ
ââ
Max
Unit
ââ
â
â
650
1250
â
â
â
â
Vdc
0.2
0.6
0.66
Vdc
700
MHz
3.0
pF
8.0
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/5
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