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LBZX84CLT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – Zener Voltage Regulator Diodes
LESHAN RADIO COMPANY, LTD.
GENERAL DATA — 225mW SOT-23
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
LBZX84C2V4LT1G
LBZX84C2V7LT1G
LBZX84C3V0LT1G
Device
Marking
Z11
Z12
Z13
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Min Nom Max
2.2
2.4
2.6
2.5
2.7
2.9
2.8
3
3.2
ZZT1
(W)
@ IZT1 =
5 mA
100
100
95
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min Max
1.7
2.1
1.9
2.4
2.1
2.7
ZZT2
(W)
@ IZT2 =
10 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
600
3
3.6
50
600
3.3
3.9
50
Max Reverse
Leakage
Current
IR
mA
@
VR
Volts
qVZ
(mV/k)
@ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
20
1
−3.5
0
450
10
1
−3.5
0
450
LBZX84C3V3LT1G
Z14
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
−3.5
0
450
LBZX84C3V6LT1G
Z15
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5
1
−3.5
0
450
LBZX84C3V9LT1G
Z16
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
LBZX84C4V3LT1G
W9
4
4.3 4.6
90
3.3
4
600
4.4
5.1
30
LBZX84C4V7LT1G
Z1
4.4
4.7
5
80
3.7
4.7
500
4.5
5.4
15
LBZX84C5V1LT1G
Z2
4.8
5.1
5.4
60
4.2
5.3
480
5
5.9
15
LBZX84C5V6LT1G
Z3
5.2
5.6
6
40
4.8
6
400
5.2
6.3
10
LBZX84C6V2LT1G
Z4
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
1
−3.5 −2.5
450
3
1
−3.5
0
450
3
2
−3.5 0.2
260
2
2
−2.7 1.2
225
1
2
−2.0 2.5
200
3
4
0.4
3.7
185
LBZX84C6V8LT1G
Z5
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
LBZX84C7V5LT1G
Z6
7
7.5 7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
LBZX84C8V2LT1G
Z7
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
LBZX84C9V1LT1G
Z8
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
LBZX84C10LT1G
LBZX84C11LT1G
LBZX84C12LT1G
Z9
9.4
10 10.6
20
9.3 10.6
150
9.4 10.7
10
0.2
7
4.5
8.0
130
Y1
10.4 11 11.6
20
10.2 11.6
150
10.4 11.8
10
0.1
8
5.4
9.0
130
Y2
11.4 12 12.7
25
11.2 12.7
150
11.4 12.9
10
0.1
8
6.0 10.0
130
LBZX84C13LT1G
LBZX84C15LT1G
LBZX84C16LT1G
LBZX84C18LT1G
LBZX84C20LT1G
LBZX84C22LT1G
Y3
12.4 13 14.1
30
12.3
14
170
12.5 14.2
15
0.1
8
7.0 11.0
120
Y4
13.8 15 15.6
30
13.7 15.5
200
13.9 15.7
20
0.05 10.5 9.2 13.0
110
Y5
15.3 16 17.1
40
15.2
17
200
15.4 17.2
20
0.05 11.2 10.4 14.0
105
Y6
16.8 18 19.1
45
16.7
19
225
16.9 19.2
20
0.05 12.6 12.4 16.0
100
Y7
18.8 20 21.2
55
18.7 21.1
225
18.9 21.4
20
0.05 14 14.4 18.0
85
Y8
20.8 22 23.3
55
20.7 23.2
250
20.9 23.4
25
0.05 15.4 16.4 20.0
85
LBZX84C24LT1G
Device
LBZX84C27LT1G
LBZX84C30LT1G
Y9
Device
Marking
Y10
Y11
22.8 24 25.6
VZ1 Below
@ IZT1 = 2 mA
Min Nom Max
25.1 27 28.9
28
30
32
70
22.7 25.5
250
22.9 25.7
25
ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@ IZT2 = 0.1 m-
A
Min Max
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3 =
10 mA
80
25
28.9
300
25.2 29.3
45
80
27.8
32
300
28.1 32.4
50
0.05 16.8 18.4 22.0
80
Max Reverse
Leakage
Current
IR
mA
@
VR
(V)
qVZ
(mV/k) Below
@ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
0.05 18.9 21.4 25.3
70
0.05 21 24.4 29.4
70
LBZX84C33LT1G
LBZX84C36LT1G
LBZX84C39LT1G
LBZX84C43LT1G
LBZX84C47LT1G
LBZX84C51LT1G
Y12
31
33
35
80
30.8
35
325
31.1 35.4
55
0.05 23.1 27.4 33.4
70
Y13
34
36
38
90
33.8
38
350
34.1 38.4
60
0.05 25.2 30.4 37.4
70
Y14
37
39
41
130
36.7
41
350
37.1 41.5
70
0.05 27.3 33.4 41.2
45
Y15
40
43
46
150
39.7
46
375
40.1 46.5
80
0.05 30.1 37.6 46.6
40
Y16
44
47
50
170
43.7
50
375
44.1 50.5
90
0.05 32.9 42.0 51.8
40
Y17
48
51
54
180
47.6
54
400
48.1 54.6
100
0.05 35.7 46.6 57.2
40
LBZX84C56LT1G
Y18
52
56
60
200
51.5
60
425
52.1 60.8
110
0.05 39.2 52.2 63.8
40
LBZX84C62LT1G
Y19
58
62
66
215
57.4
66
450
58.2 67
120
0.05 43.4 58.8 71.6
35
LBZX84C68LT1G
Y20
64
68
72
240
63.4
72
475
64.2 73.2
130
0.05 47.6 65.6 79.8
35
LBZX84C75LT1G
Y21
70
75
79
255
69.4
79
500
70.3 80.2
140
0.05 52.5 73.4 88.6
35
Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
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