|
LBC807-25WT1G Datasheet, PDF (2/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon | |||
|
◁ |
LESHAN RADIO COMPANY, LTD.
LBC807-25WT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = â10 mA)
CollectorâEmitter Breakdown Voltage
(VEB = 0, IC = â10 µA)
EmitterâBase Breakdown Voltage
(IE = â1.0 µA)
Collector Cutoff Current
(V CB = â20 V)
(V CB = â20 V, TJ = 150°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
I CBO
â45
â50
â5.0
â
â
Typ
Max
Unit
â
â
V
â
â
V
â
â
V
â
â100
nA
â
â5.0
µA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC= â100 mA, VCE = â1.0 V)
h FE
CollectorâEmitter Saturation Voltage
(IC = â500 mA, IB = â50 mA)
BaseâEmitter On Voltage
(IC = â500 mA, V CE= â1.0 V)
V CE(sat)
V BE(on)
Min
Typ
Max
Unit
160
â
400
â
â
â
â0.7
V
â
â
â1.2
V
SMALLâSIGNAL CHARACTERISTICS
CurrentâGain â Bandwidth Product
(IC = â10 mA, VCE = â5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = â10 V, f = 1.0 MHz)
fT
C obo
100
â
â
MHz
â
10
â
pF
Rev.O 2/3
|
▷ |