LBC807-16LT1G_15 Datasheet, PDF (2/10 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_{C = –10 mA)}
Collector–Emitter Breakdown Voltage
(V_{EB = 0, IC = –10 µA)}
Emitter–Base Breakdown Voltage
(I_{E = –1.0 µA)}
Collector Cutoff Current
(V _{CB = –20 V)}
(V _{CB = –20 V, TJ = 150°C)}
V(BR)CEO
V(BR)CES
V(BR)EBO
I _CBO
–45
—
–50
—
–5.0
—
—
—
—
—
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
DC Current Gain
(I_C= –100 mA, V_CE = –1.0 V)
LBC807–16
LBC807–25
LBC807–40
(I_C = –500 mA, V_CE = –1.0 V)
Collector–Emitter Saturation Voltage
(I_C = –500 mA, I_B = –50 mA)
Base–Emitter On Voltage
(I_C = –500 mA, V CE= –1.0 V)
h _FE
V _CE(sat)
V _BE(on)
100
—
160
—
250
—
40
—
—
—
—
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I_C = –10 mA, V_CE = –5.0 V_dc, f = 100 MHz)
Output Capacitance
(V_CB = –10 V, f = 1.0 MHz)
f_T
C _obo
100
—
—
10
Max
—
—
—
–100
–5.0
Max
250
400
600
—
–0.7
–1.2
—
—
Unit
V
V
V
nA
µA
Unit
—
V
V
MHz
pF
Rev.O 2/10