L9012QLT1G_15 Datasheet, PDF (2/2 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
L9012PLT1G Series
S-L9012PLT1G Series
ON CHARACTERISTICS
DC Current Gain
(IC=-50mA, VCE =-1V)
Collector-Emitter Saturation Voltage
(IC=-500mA,I B=-50mA)
H fe
100
-
600
VCE(S)
-
-
-0.6
V
NOTE:
*
HFE
P
Q
R
S
100~200 150~300 200~400 300~600
SOT-23 (TO-236AB)
A
L
3
BS
1
2
V
G
C
D
H
K
J
0.037
0.95
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 2/2