MSD1328-RT1 Datasheet, PDF (1/1 Pages) ON Semiconductor – NPN Low Voltage Output Amplifier Surface Mount

LESHAN RADIO COMPANY, LTD.
NPN Low Voltage Output
Amplifiers - Surface Mount
MARKING DIAGRAM
COLLECTOR
3
1MX M
x = R for RT1
S for ST1
M = Date Code
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25 °C)
Rating
Symbol
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current – Continuous
Collector Current – Peak
THERMAL CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
T stg
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IE = 0)
Collector–Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
DC Current Gain (Note 1)
MSD1328–RT1
(VCE = 2.0 Vdc, IC = 500 mAdc)
MSD1328–ST1
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 20 mAdc)
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Value
25
20
12
500
1000
Max
200
150
-55 ~ +150
Symbo
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
lMin
20
25
12
–
200
300
–
–
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. 3 2%.
MSD1328–RT1
MSD1328–ST1
3
2
1
SC–59 SUFFIX
CASE 318D
Max
–
–
–
0.1
300
500
0.4
1.2
Unit
Vdc
Vdc
Vdc
µAdc
–
Vdc
Vdc
MSD1328–RT1–1/1
MSD1328–ST1