MSC3130T1 Datasheet, PDF (1/1 Pages) Motorola, Inc – NPN RF Amplifier Transistors Surface Mount

LESHAN RADIO COMPANY, LTD.
NPN RF Amplifier Transistor
Surface Mount
COLLECTOR
3
MSC3130T1
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25 °C)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
V CBO
15
V CEO
10
V EBO
3.0
IC
50
Characteristic
Symbol
Max
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
TJ
150
T stg
–55 ~ +150
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
Characteristic
Symbol
Collector Cutoff Current
(V CB = 10 Vdc, I E = 0)
Collector-Emitter Breakdown Voltage
(I C = 2.0 mAdc, I B = 0)
Emitter-Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
DC Current Gain ⁽¹⁾
(V CE = 4.0 Vdc, I C = 5.0 mAdc)
Collector-Emitter Saturation Voltage
(I C = 20 mAdc, I B = 4.0 mAdc)
Current-Gain–Bandwidth Produc
(V CB = 4.0 Vdc, I E = -5.0 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C.<2%.
I CBO
V CEO
V EBO
h FE
V CE(sat)
tf T
DEVICE MARKING
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
Min
—
10
3.0
75
—
1.4
Marking Symbol
1S ^X
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
2
1
CASE 318D–03, STYLE 1
SC–59
Max
1.0
—
—
400
0.5
2.5
Unit
µAdc
Vdc
Vdc
—
Vdc
GHz
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