MMVL3401T1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Pin Diode

LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
This device is designed primarily for VHF band switching applications but is also
suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
package.
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance – 0.7 pF Typ at VR = 20 Vdc
• Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ)
@ IF = 10 mAdc
• Device Marking: 4D
MMVL3401T1
SILICON PIN
SWITCHING DIODE
1
2
PLASTIC, CASE 477
SOD– 323
ORDERING INFORMATION
Device
Package
Shipping
MMVL3401T1 SOD–323
3000 / Tape & Reel
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
IF
Peak Forward Current
THERMAL CHARACTERISTICS
20
Vdc
20
mAdc
Symbol
Characteristic
Max
Unit
PD
Total Device Dissipation FR–5 Board,*
200
mW
TA = 25°C
Derate above 25°C
1.57
mW/°C
RθJA
Thermal Resistance Junction to Ambient
635
°C/W
TJ, Tstg
Junction and Storage Temperature
150
°C
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse BreakdownVoltage
V(BR)R
35
—
(IR = 10 µAdc)
Diode Capacitance
(V_R = 20 Vdc)
Series Resistance
(I_F = 10 mAdc, f =100MHz)
Reverse Leakage Current
(V_R = 25 Vdc)
C_T
—
—
R_S
—
–
I_R
—
—
Max
—
1.0
0.7
0.1
Unit
Vdc
pF
Ω
µAdc
MMVL3401T1–1/2