MMVL3102T1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid–state reliability
in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Device Marking: 4C
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMVL3102T1 SOD–323
3000 / Tape & Reel
MMVL3102T1
22 pF (Nominal) 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
2
PLASTIC, CASE 477
SOD– 323
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
IF
Peak Forward Current
THERMAL CHARACTERISTICS
30
Vdc
200
mAdc
Symbol
Characteristic
Max
Unit
PD
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RθJA
Thermal Resistance Junction to Ambient
TJ, Tstg
Junction and Storage Temperature
*FR–4 Minimum Pad
200
1.57
635
150
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse BreakdownVoltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
V(BR)R
30
—
IR
—
—
TCC
—
300
Max
—
0.1
Unit
Vdc
µAdc
— ppm/°C
Device
MMVL3102T1
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Min
Nom
Max
20
22
25
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min
Max
4.5
4.8
MMVL3102T1–1/2