MMDL770T1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Schottky Barrier Diode

LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance — 1.0 pF @ 20 V
• Low Reverse Leakage — 200 nA (max)
• High Reverse Voltage — 70 Volts (min)
• Available in 8 mm Tape and Reel
• Device Marking: 5H
MMDL770T1
1.0 pF SCHOTTKY
BARRIER DIODE
1
MAXIMUM RATINGS
Symbol
V_R
1
CATHODE
2
ANODE
Rating
Reverse Voltage
Value
70
Unit
Vdc
2
PLASTIC SOD– 323
CASE 477
THERMAL CHARACTERISTICS
Symbol
P_D
R _θJA
T _J , T _stg
Characteristic
Total Device Dissipation FR–5 Board,*
T _A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
Device
MMDL770T1
ORDERING INFORMATION
Package
SOD–323
Shipping
3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I _R = 10 µA)
Diode Capacitance
(V _R = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V _R = 35 V)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mA)
V _(BR)R
70
C_T
—
I_R
—
V_F
—
Typ
Max
Unit
—
—
Volts
0.5
1.0
pF
9.0
200
nAdc
0.7
1.0
Vdc
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