MMDL101T1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Schottky Barrier Diode

LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many
other fast switching RF and digital applications.
• Very Low Capacitance — Less than 1.0 pF @ Zero Volts
• Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
• Device Marking: 4M
MMDL101T1
1.0 pF SCHOTTKY
BARRIER DIODE
1
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
V_R
Rating
Reverse Voltage
Value
7.0
2
PLASTIC SOD– 323
CASE 477
Unit
Vdc
THERMAL CHARACTERISTICS
Symbol
P_D
R _θJA
T _J , T _stg
Characteristic
Total Device Dissipation FR–5 Board,*
T _A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Max
200
1.57
635
–55 to+150
Device
MMDL101T1
ORDERING INFORMATION
Package
SOD–323
Shipping
3000 / Tape & Reel
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I _R = 10 µA)
V _(BR)R
7.0
Diode Capacitance
(V _R = 0, f = 1.0MHz, Note 1)
C_T
—
Reverse Leakage
(V _R = 3.0 V)
I_R
—
Noise Figure
(f = 1.0 GHz, Note 2)
NF
—
Forward Voltage
(I _F = 10 mA)
V_F
—
*Notes on Next Page
Typ
10
0.88
20
6.0
0.5
Max
—
1.0
250
—
0.6
Unit
Volts
pF
nAdc
dB
Vdc
S1–1/3