MMBV609LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode
configuration for minimum signal distortion and detuning. This device is
supplied in the SOT–23 plastic package for high volume, pick and place
assembly requirements.
• High Figure of Merit — Q = 450 (Typ) @ V _R = 3.0 Vdc, f = 50 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching
• Hyper Abrupt Junction Process Provides High Tuning Ratio
1
2
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T _A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V_R
I_F
P_D
T_J
T _stg
DEVICE MARKING
MMBV609LT1=5L
Value
20
100
225
1.8
+125
–55 to +150
MMBV609LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
3
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS(T _A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(I_R=10µAdc)
Reverse Voltage Leakage Current
(V_R=15Vdc)
Diode Capacitance
(V_R=3.0 Vdc,f=1.0MHz)
Capacitance Ratio C3/C8
(f=1.0MHz)
V _(BR)R
20
—
I_R
—
—
C_T
26
—
C_R
1.8
—
Figure of Merit
(V_R=3.0 Vdc, f=50MHz)
Q
250
450
Max
—
10
32
2.4
—
Unit
Vdc
nAdc
pF
—
—
MMBV609LT1–1/2