MMBV432LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode con-
figuration for minimum signal distortion and detuning. This device is supplied
in the SOT–23 plastic package for high volume, pick and place assembly
requirements.
• High Figure of Merit— Q = 150 (Typ) @ V _R = 2.0 Vdc, f = 100 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0% (Max)
Over Specified Tuning Range
1
2
3
MMBV432LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T _A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V_R
I_F
P_D
T_J
T _stg
DEVICE MARKING
MMBV432LT1=M4B
Value
14
200
225
1.8
+125
–55 to +125
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(I_R=10µAdc)
Reverse Voltage Leakage Current
(V_R=9.0Vdc)
Diode Capacitance
(V_R=2.0 Vdc,f=1.0MHz)
Capacitance Ratio C2/C8
(f=1.0MHz)
V _(BR)R
14
—
I_R
—
—
C_T
43
—
C_R
1.5
—
Figure of Merit
(V_R=2.0 Vdc, f=100MHz)
Q
100
150
Max
—
100
48.1
2.0
—
Unit
Vdc
nAdc
pF
—
—
MMBV432–1/2