MMBV409LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed forgeneral frequency control and tuning applications.
They provide solid- state reliability in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MMBV409LT1
MV409
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409
Symbol
V_R
I_F
P_D
T_J
T_stg
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MBV409
20
200
MMBV409LT1
20
200
Unit
Vdc
mAdc
280
225
2.8
1.8
+125
–55 to +150
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I_R = 10 µAdc)
V_(BR)R
20
—
—
Vdc
Reverse Voltage Leakage Current
(V_R = 15 Vdc)
I_R
—
—
0.1
µAdc
Diode Capacitance Temperature Coefficient
(V_R = 3.0 Vdc, f = 1.0 MHz)
TC_C
—
300
—
ppm/°C
C_t, Diode Capacitance
V_R = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min
Nom
Max
MMBV409LT1, MV409
26
29
32
1. C_R is the ratio of C_t measured at 3 Vdc divided by C_t measured at 8 Vdc.
Q, Figure of Merit
V_R = 3.0 Vdc
f = 50 MHz
Min
200
C_R, Capacitance Ratio
C₃/C₈
f = 1.0 MHz⁽¹⁾
Min
Max
1.5
1.9