MMBV3700LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Pin Diode

LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
These devices are designed primarily for VHF band switching appli-
cations but are also suitable for use in general–purpose switching
circuits. They are supplied in a cost–effective plastic package for
economical, high–volume consumer and industrial requirements. They
are also available in surface mount.
• Long Reverse Recovery Time
t _rr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
• Low Series Resistance @ 100 MHz —
R _S = 0.7 Ohms (Typ) @ I _F = 10 mAdc
• Reverse Breakdown Voltage = 200 V (Min)
3
CATHODE
1
ANODE
MMBV3700LT1
SILICON PIN
SWITCHING DIODE
3
1
2
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol M V 2 1 X X MMBV21XXLT1 Unit
Reverse Voltage
Device Dissipation @T _A = 25°C
Derate above 25°C
V_R
200
Vdc
P_D
280
200
mW
2.8
2.0
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T_J
+150
°C
T _stg
–55 to +150
°C
MMBV3700LT1=4R
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(I_R=10µAdc)
Diode Capacitance
(V_R=20 Vdc,f=1.0MHz)
Series Resistance(figure5)
(I_F=10mAdc)
Reverse Leakage Current
(V_R=150Vdc)
Reverse Recovery Time
(I_F=I_R=10mAdc)
V _(BR)R
200
—
C_T
—
—
R_S
—
0.7
I_R
—
—
t _rr
—
300
Max
—
1.0
1.0
0.1
—
Unit
Vdc
pF
Ω
µAdc
ns
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