MMBV3401LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Ping Diode

LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
This device is designd primarily for VHF band switching applications
but is also suitable for use in general-purpose switching circuits.Supplied
in a surface Mount package.
• Rugged Pin Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance—0.7pF Typ at VR=20Vdc
• Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc
MMBV3401LT1
SILICON PIN
SWITCHING DIODE
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Value
Reverse Voltage
V_R
20
Forward power Dissipation @T _A = 25°C
P_D
200
Derate above 25°C
2.0
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T_J
+125
T _stg
–55 to +150
MMBV3401LT1=4D
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I_R=10µAdc)
Diode Capacitance
(V_R=20 Vdc)
Series Resistance(figure5)
(I_F=10mAdc,f=100MHz)
Reverse Voltage Leakage Current
(V_R=15Vdc)
V _(BR)R
35
C_T
—
R_S
—
I_R
—
Unit
Vdc
mW
mW/°C
°C
°C
Typ
—
—
—
—
Max
—
1.0
0.7
0.1
Unit
Vdc
pF
Ω
µAdc
MMBV3401LT1–1/2