MMBV3102LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for
general frequency controland tuning applications. It provides
solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
MMBV3102LT1
22 pF(Nominal) 30Volts
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @T _A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V_R
I_F
P_D
T_J
T _stg
Value
30
200
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV3102LT1= M4C
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I_R=10µAdc)
Reverse Voltage Leakage Current
(V_R=15Vdc)
Diode Capacitance Temperature Coefficient
(V_R=4.0Vdc,f=1.0MHz)
V _(BR)R
I_R
T _CC
30
—
—
Vdc
—
—
0.1
µAdc
—
300
—
ppm/°C
Device Type
MMBV3102LT1
C_TDiode Capacitance
V_R=3.0Vdc,f=1.0MHz
pF
Q,Figure of Merit
V =3.0Vdc
R
f=50MHz
Min Nom
Max
Min
20
22
25
200
C_R,Capacitance Ratio
C₃/C₂₅
f=1.0MHz
Min
Typ
4.5
4.8
MMBV3102LT1–1/2