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MMBV109LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Epicap Diode | |||
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LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications;
providing solidâstate reliability in replacement of mechanical tuning
methods.
⢠High Q with Guaranteed Minimum Values at VHF Frequencies
⢠Controlled and Uniform Tuning Ratio
⢠Available in Surface Mount Package
MMBV109LT1
MBV109T1
MV209
26â32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
MBV109T1 MMBV109LT1 MV209
Reverse Voltage
Forward Current
Device Dissipation
@T A = 25°C
Derate above 25°C
VR
IF
PD
280
2.8
30
200
200
200
2.0
1.6
Junction Temperature
TJ
Storage Temperature Range
T stg
DEVICE MARKING
+125
â55 to +150
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
( I R = 10 µ Adc)
V (BR)R
30
Reverse Voltage Leakage Current
( V R = 25Vdc)
IR
â
Diode Capacitance Temperature Coefficient
(V R = 3.0 Vdc, f = 1.0 MHz)
TC C
â
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
Typ
â
â
300
3
1
2
CASE 318â08, STYLE 6
SOTâ 23 (TOâ236AB)
Max
â
0.1
â
Unit
Vdc
mAdc
ppm/°C
C T Diode Capacitance
VR =3.0Vdc, f =1.0MHz
pF
Q, Figure of
Merit
V R = 3.0Vdc
f = 50MHz
CR, Capacitance
Ratio
C3 / C 25
f=1.0MHz (Note 1)
Device Type
Min Nom Max
Min
Min
Max
MBV109T1, MMBV109LT1, MV209 26 29
32
200
5.0
6.5
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
MBV109. MMBV109*. MV209*â1/2
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