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MMBTH10LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – VHF/UHF Transistor | |||
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LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
NPN Silicon
1
BASE
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Symbol
V CEO
V CBO
V EBO
Value
25
30
3.0
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
MMBTH10LT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
â55 to +150
°C/W
°C
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
CollectorâBase Breakdown Voltage
(I C = 100 µAdc , I E = 0)
EmitterâBase Breakdown Voltage
(I E = 10 µAdc , I C= 0)
Collector Cutoff Current
( V CB = 25Vdc , I E = 0 )
Emitter Cutoff Current
( V EB = 2.0Vdc , I C= 0 )
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
25
V (BR)CBO
30
V (BR)EBO
3.0
I CBO
â
I EBO
â
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
100
nAdc
â
100
nAdc
M33â1/4
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