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MMBTA92LAT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – High Voltage Transistor | |||
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LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
2
EMITTER
Value
Symbol MMBTA92 MMBTA93 Unit
CollectorâEmitter Voltage
V CEO
â300
â200 Vdc
CollectorâBase Voltage
V CBO
â300
â200 Vdc
EmitterâBase Voltage
V EBO
â5.0
Vdc
Collector Current â Continuous I C
â500
mAdc
MMBTA92LT1
MMBTA93LT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
â55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA92LT1 = 2D, MMBTA93LT1 = 2E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage(3)
(I C = â1.0 mAdc, I B = 0)
CollectorâEmitter Breakdown Voltage
(I C = â100 µAdc, I E = 0)
EmitterâBase Breakdown Voltage
(I E = â100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = â200Vdc, I E = 0)
( V CB = â160Vdc, I E = 0)
Collector Cutoff Current
( V CB = â3.0Vdc, I C = 0)
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
â300
â200
â300
â200
â5.0
â
â
â
Max
Unit
â
â
â
â
â
â0.25
â0.25
â0.1
Vdc
Vdc
Vdc
nAdc
µAdc
M32â1/3
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