MMBTA70LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–40
–4.0
–100
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
mAdc
MMBTA70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA70LT1 = M2C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –30Vdc, I E = 0)
ON CHARACTERISTICS
DC Current Gain(I C = –5.0mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage(I C = –10mAdc, I B = –1.0 mAdc)
V (BR)CEO
V (BR)EBO
I CBO
hFE
VCE(sat)
–40
–4.0
—
40
––
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(I C = –5.0mAdc, V CE= –10Vdc, f = 100MHz) f T
125
Output Capacitance(V CB = –10Vdc, I E = 0, f = 1.0 MHz)
C obo
––
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
––
Vdc
—
–100
Vdc
nAdc
400
––
–0.25
Vdc
––
MHz
4.0
pF
M31–1/5