MMBTA63LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – Darlington Transistors

LESHAN RADIO COMPANY, LTD.
Darlington Transistors
PNP Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V _CES
V _CBO
V _EBO
Collector Current — Continuous I _C
Value
–30
–30
–10
–500
Unit
Vdc
Vdc
Vdc
mAdc
MMBTA63LT1
MMBTA64LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = –100 µAdc, )
V _(BR)CEO
–30
Collector Cutoff Current
( V _CB = –30Vdc)
I _CBO
—
Emitter Cutoff Current
( V _EB = –10Vdc )
I _EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
–100
–100
Vdc
nAdc
nAdc
M30–1/3