MMBTA55LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Driver Transistors

LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
MMBTA55 MMBTA56 Unit
–60 –80 Vdc
–60 –80 Vdc
–4.0
Vdc
–500
mAdc
MMBTA55LT1
MMBTA56LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B= 0 )
MMBTA55
MMBTA56
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current
( V CB = –60Vdc, I E= 0)
MMBTA55
( V CB = –80Vdc, I E= 0)
MMBTA56
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V (BR)CEO
V (BR)EBO
I CEO
I _CBO
–60
–80
–4.0
—
—
—
Max
Unit
Vdc
—
—
—
Vdc
–0.1
µAdc
µAdc
–0.1
–0.1
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