MMBTA42LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – High Voltage Transistors

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
2
EMITTER
Value
MMBTA42 MMBTA43
300
200
300
200
6.0
6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
MMBTA42LT1
MMBTA43LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc, I B = 0)
MMBTA42
300
MMBTA43
200
Emitter–Base Breakdown Voltage
(I C= 100 µAdc, I E= 0)
MMBTA42
MMBTA43
V (BR)CBO
300
200
Emitter–Base Breakdown Voltage
(I E= 100 µAdc, I C= 0)
Collector Cutoff Current
( V CB= 200Vdc, I E= 0)
( V CB= 160Vdc, I E= 0)
Emitter Cutoff Current
( V EB= 6.0Vdc, I C= 0)
MMBTA42
MMBTA43
MMBTA42
V (BR)EBO
6.0
I CBO
—
—
I EBO
—
( V EB= 4.0Vdc, I C= 0)
MMBTA43
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Max
Unit
Vdc
—
—
Vdc
—
—
—
Vdc
µAdc
0.1
0.1
µAdc
0.1
0.1
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