MMBTA20LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Amplifier

LESHAN RADIO COMPANY, LTD.
General Purpose Amplifier
NPN Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Value
40
4.0
100
Unit
Vdc
Vdc
mAdc
MMBTA20LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA20LT1 = 1C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 1.0 mAdc, I _B= 0)
Emitter–Base Breakdown Voltage
(I _E = 100 µAdc, I _C= 0 )
Collector Cutoff Current
( V _CB = 30Vdc , I _E = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V _(BR)CEO
40
V _(BR)EBO
4.0
I _CBO
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
100
nAdc
M27–1/6