MMBTA13LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – Darlington Amplifier Transistors

LESHAN RADIO COMPANY, LTD.
Darlington Amplifier Transistors
NPN Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CES
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
1
BASE
2
EMITTER
Value
30
30
10
300
Unit
Vdc
Vdc
Vdc
mAdc
MMBTA13LT1
MMBTA14LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 100 µAdc, V _BE = 0)
Collector Cutoff Current
( V _CB = 30Vdc, I _E = 0)
Emitter Cutoff Current
( V _EB = 10Vdc, I _C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V _(BR)CEO
30
I _CBO
—
I _EBO
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
100
nAdc
100
nAdc
M26–1/5