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MMBT6472LT1 Datasheet, PDF (1/5 Pages) Leshan Radio Company – Darlington Transistors(NPN Silicon) | |||
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LESHAN RADIO COMPANY, LTD.
Darlington Transistors
NPN Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
V CEO
CollectorâBase Voltage
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
1
BASE
2
EMITTER
Value
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
MMBT6427LT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
â55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage(3)
(I C = 10 mAdc, V BE = 0)
V (BR)CEO
40
CollectorâBase Breakdown Voltage
(I C = 100 µAdc, I E = 0)
EmitterâBase Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)CBO
40
V (BR)EBO
12
Collector Cutoff Current
( V CE = 25Vdc, I B = 0)
I CES
â
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C= 0)
I CBO
â
I EBO
â
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
â
Vdc
â
Vdc
â
Vdc
1.0
µAdc
50
nAdc
50
nAdc
M21â1/5
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