MMBT6428LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Value
Symbol 6428LT1 6429LT1 Unit
Collector–Emitter Voltage
V CEO
50
45 Vdc
Collector–Base Voltage
V CBO
60
55 Vdc
Emitter–Base Voltage
V EBO
6.0
Vdc
Collector Current — Continuous I C
200
mAdc
MMBT6428LT1
MMBT6429LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
MMBT6428
MMBT6429
(I C = 0.1mAdc, I E = 0)
(I C = 0.1mAdc, I E = 0)
Collector Cutoff Current
MMBT6428
MMBT6429
( V CE = 30Vdc, )
Collector Cutoff Current
( V CB = 30Vdc, I E = 0 )
Emitter Cutoff Current
( V EB = 5.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
50
45
V (BR)CBO
60
55
I CBO
—
I CBO
—
I EBO
—
Max
Unit
Vdc
—
—
Vdc
—
—
µAdc
0.1
µAdc
0.01
0.01
µAdc
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