MMBT5550LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
1
BASE
Value
140
160
6.0
600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
MMBT5550LT1
MMBT5551LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc, I B = 0)
MMBT5550
140
MMBT5551
160
Collector–Base Breakdown Voltage
V (BR)CBO
(I C = 100 µAdc, I E = 0)
MMBT5550
160
MMBT5551
180
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)EBO
6.0
Collector Cutoff Current
I CBO
( V CB = 100Vdc, I E = 0)
MMBT5550
—
( V CB = 120Vdc, I E = 0)
MMBT5551
—
( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550
—
( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551
—
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
I EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Max
Unit
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
50
100
µAdc
50
50
nAdc
M20–1/4