MMBT5401LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistor

LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T _A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT5401LT1=2L
1
BASE
3
COLLECTOR
2
EMITTER
Symbol
V _CEO
V _CBO
V _EBO
I_C
Value
– 150
– 160
– 5.0
– 500
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
P_D
Max
225
Unit
mW
R _θJA
P_D
1.8
mW/°C
556
°C/W
300
mW
R _θJA
T _J , T_stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
M M B T 5 4 0 1 LT 1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = –1.0 mAdc, I _B = 0)
Collector–Base Breakdown Voltage
(I _C = –100 µAdc, I _E = 0)
Emitter-BAse Breakdown Voltage
(I _E= –10µAdc,I _C=0)
Collector Cutoff Current
(V _CB = –120 Vdc, I_E= 0)
V _(BR)CEO
V _(BR)CBO
V_(BR)EBO
I _CES
(V _CB = –120 Vdc, I_E= 0, T _A=100 °C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
– 150
– 160
-5.0
—
—
Max
Unit
—
—
—
– 50
– 50
Vdc
Vdc
Vdc
nAdc
µAdc
M19–1/4