MMBT5088LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Low Noise Transistors

LESHAN RADIO COMPANY, LTD.
Low Noise Transistors
NPN Silicon
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
1
BASE
2
EMITTER
Symbol
V CEO
V CBO
V EBO
IC
5088LT 15089LT1
30
25
35
30
4.5
50
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
Unit
mW
mW/ °C
°C/W
mW
2.4
417
–55 to + 150
mW/ °C
°C/W
°C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V (BR)CEO
(I C = 1.0 mAdc, I B = 0)
MMBT5088
30
MMBT5089
25
Collector–Base Breakdown Voltage
V(BR)CBO
(I C = 100 µAdc, I E = 0)
MMBT5088
35
MMBT5089
30
Collector Cutoff Current
(V CB = 20 Vdc, I E = 0 )
(V CB = 15 Vdc, I E = 0 )
I CBO
MMBT5088
—
MMBT5089
—
Emitter Cutoff Current
I EBO
(VEB(off)= 3.0Vdc, I C = 0)
MMBT5088
—
(VEB(off) = 4.5Vdc, I C = 0)
MMBT5089
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBT5088LT1
MMBT5089LT1
3
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Max Unit
Vdc
—
—
Vdc
—
—
nAdc
50
50
nAdc
50
100
M18–1/4