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MMBT4403LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – Switching Transistor | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Symbol
V CEO
V CBO
V EBO
IC
Value
â 40
â 40
â 5.0
â 600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR â5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4403LT1 = 2T
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
â55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (3)
(I C = â1.0 mAdc, I B = 0)
CollectorâBase Breakdown Voltage
(I C = â0.1mAdc, I E = 0)
EmitterâBase Breakdown Voltage
(I E = â0.1mAdc, I C = 0)
Base Cutoff Current
(V CE = â35 Vdc, V EB = â0.4 Vdc)
Collector Cutoff Current
(V CE = â35 Vdc, V EB = â0.4 Vdc)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BEV
I CEX
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Min
â 40
â 40
â 5.0
â
â
MMBT4403LT1
3
1
2
CASE 318â08, STYLE 6
SOTâ 23 (TOâ236AB)
Max
Unit
â
â
â
â 0.1
â 0.1
Vdc
Vdc
Vdc
µAdc
µAdc
O15â1/5
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