MMBT404ALT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Chopper Transistor

LESHAN RADIO COMPANY, LTD.
Chopper Transistor
PNP Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V CEO
V CBO
V EBO
IC
Value
– 35
– 40
– 25
– 150
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT404ALT1 = 2N
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –10 mAdc, I B = 0)
Collector– Emitter Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Collector Cutoff Current
(V CE = –10Vdc, I E = 0)
Emitter Cutoff Current
(V EB= –10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
– 35
—
V (BR)CBO
– 40
—
V (BR)EBO
– 25
—
I CBO
—
—
I EBO
—
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBT404ALT1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Max
Unit
—
—
—
–100
–100
Vdc
Vdc
Vdc
nAdc
nAdc
O1–1/2