MMBT3904WT1 Datasheet, PDF (1/9 Pages) Motorola, Inc – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed
in the SOT–323/SC–70 which is designed for low power surface mount applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
Symbol
V CEO
V CBO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (1)
T A =25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Value
40
– 40
60
– 40
6.0
– 5.0
200
– 200
Unit
Vdc
Vdc
Vdc
mAdc
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC–70
DEVICE MARKING
MMBT3904WT1 = AM; MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
MMBT3904WT1
MMBT3906WT1
V (BR)CEO
(I C = 10 µAdc, I E = 0)
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
MMBT3904WT1
MMBT3906WT1
V(BR)CBO
Min
Max
40
—
– 40
—
60
—
– 40
—
(IE= 10 µAdc, I C = 0)
MMBT3904WT1
V(BR)EBO
6.0
—
(I E = –10 µAdc, I C = 0)
MMBT3906WT1
Base Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc)
MMBT3904WT1
I BL
(V CE = –30 Vdc, V EB = –3.0 Vdc)
MMBT3906WT1
Collector Cutoff Current
– 5.0
—
—
50
—
-50
(V CE = 30 Vdc, V EB = 3.0 Vdc)
MMBT3904WT1
I CEX
—
50
(V CE = –30 Vdc, V EB = –3.0 Vdc)
MMBT3906WT1
—
– 50
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
K3–1/9